BAS85T Datasheet, PDF (1/1 Pages) Diodes Incorporated – SILICON SCHOTTKY BARRIER DIODE

BAS85T-01I
SILICON SCHOTTKY BARRIER DIODE
Features
· For general applications
· Low turn-on voltage
· PN junction guard ring
A
Min Max
B
A
3.4 3.6
C
B 1.40 1.50
C 0.20 0.40
All dimensions in mm
Mechanical Data
· Glass case
· Weight: 0.05g (approx)
Maximum Ratings
@ T_A = 25°C unless otherwise specified
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current *
Surge forward current*
Power dissipation*
Junction temperature
Operating temperature range
Storage temperature range
@ t_p = 1s
@ T_A = 65°C
Symbol
V_R
I_F
IFM
I_FSM
P_tot
T_j
T_A
T_STG
Value
30
200
300
600
250
125
-65 to +125
-65 to +150
Electrical Characteristics @ Tj = 25°C unless otherwise specified
Characteristic
Reverse breakdown voltage
10 µA pulses
Symbol
Min
Typ
V_(BR)R
30
—
* Valid provided that electrodes are kept at ambient temperature.
Unit
V
mA
mA
mA
mW
°C
°C
°C
Max
Unit
—
V
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Document Number: 11004 Revision A- 5
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