BAS85 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Features
· For general applications
· Low turn-on voltage
· PN junction guard ring
Mechanical Data
· Glass case
· Weight: 0.05g (approx)
BAS85
SILICON SCHOTTKY BARRIER DIODE
A
B
C
Min
Max
A
3.4
3.6
B
1.40
1.50
C
0.20
0.40
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current*
@ tp = 1s
Power dissipation*
@ T_A = 65°C
Junction temperature
Operating temperature range
Storage temperature range
Symbol
V_R
I_F
I_FM
I_FSM
Ptot
T_j
T_A
T_STG
Value
Unit
30
V
200
mA
300
mA
600
mA
200
mW
125
°C
-65 to +125
°C
-65 to +150
°C
Electrical Characteristics ^{@ T}j ^{= 25°C unless otherwise specified}
Characteristic
Reverse breakdown voltage
10 mA pulses
Symbol
Min
Typ
V(BR)R
30
—
Max
—
Unit
V
* Valid provided that electrodes are kept at ambient temperature.
DS30189 Rev. A-5
1 of 1
BAS85