BAS70_ Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features
• Low Turn-on Voltage
• Fast Switching
• PN Junction Guard Ring for Transient and ESD
Protection
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method
208
• Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
• Polarity: See Diagrams Below
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SPICE MODELS: BAS70 BAS70-04 BAS70-05 BAS70-06
BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Top View
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
BAS70 Marking: K73, K7C
BAS70-04 Marking: K74, K7D
BAS70-05 Marking: K75, K7E
BAS70-06 Marking: K76, K7F
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_θJA
T_j
T_STG
Value
70
49
70
100
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
70
V_F
—
I_R
⎯
C_T
⎯
t_rr
—
Max
—
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I_R = 10µA
t_p <300µs, I_F = 1.0mA
t_p <300µs, I_F = 15mA
t_p <300µs, V_R = 50V
V_R = 0V, f = 1.0MHz
I_F = I_R = 10mA to I_R = 1.0mA,
R_L =100Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS11007 Rev. 19 - 2
1 of 3
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BAS70/ -04/ -05/ -06
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