BAS70W Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70W/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
· Ultra-Small Surface Mount Package
Mechanical Data
· Case: SOT-323, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams
· Marking: See Diagrams
· Mounting Position: Any
· Approx. Weight: 0.006 grams
A
TOP VIEW
BC
E
D
G
H
K
J
L
SOT-323
Dim Min Max
A
0.30 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
M
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
BAS70W Marking: K73
BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
Maximum Ratings and Electrical Characteristics, Single Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t_p < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
VR(RMS)
I_F
I_FSM
P_d
R_qJA
T_j
T_STG
BAS70W
70
49
70
100
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
K/W
°C
°C
Electrical Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
70
VFM
—
IRM
¾
C_j
¾
t_rr
—
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS30113 Rev. A-2
1 of 1
Max
—
410
1000
100
2.0
5.0
Unit
—
mV
nA
pF
ns
Test Condition
I_R = 10mA
tp <300µs, IF = 1.0mA
t_p <300µs, I_F = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
Irr = 0.1 x I_R, R_L = 100W
BAS70W/ -04/ -05/ -06