BAS70T_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SPICE MODELS: BAS70T BAS70-04T BAS70-05T BAS70-06T
BAS70T/ -04T/ -05T/ -06T
Lead-free _{SURFACE MOUNT SCHOTTKY BARRIER DIODE}
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
· Ultra-Small Surface Mount Package
· Lead Free/RoHS Compliant (Note 3)
Mechanical Data
· Case: SOT-523
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminals: Finish - Solderable per MIL-STD-202,
Method 208
· Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 2
· Ordering Information, See Page 2
· Weight: 0.002 grams (approximate)
A
BC
G
H
K
N
J
D
L
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
BAS70-06T Marking: 7F
Maximum Ratings and Electrical Characteristics, Single Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t_p < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
VR(RMS)
I_FM
I_FSM
P_d
R_qJA
Tj
T_STG
Value
70
49
70
100
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
V_(BR)R
70
V_F
—
IR
¾
C_T
¾
trr
—
—
410
1000
100
2.0
5.0
—
I_R = 10mA
mV
t_p <300µs, I_F = 1.0mA
t_p <300µs, I_F = 15mA
nA
tp < 300µs, VR = 50V
pF
V_R = 0V, f = 1.0MHz
ns
I_F = I_R = 10mA to I_R = 1.0mA,
Irr = 0.1 x IR, RL = 100W
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30261 Rev. 9 - 2
1 of 3
BAS70T/ -04T/ -05T/ -06T
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