BAS70JW_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

SPICE MODELS: BAS70JW
BAS70JW
Lead-free
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Features
· Low Forward Voltage Drop
· Fast Switching
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and ESD Protection
· Lead Free/RoHS Compliant (Note 3)
A
BC
Mechanical Data
G
H
· Case: SOT-363
· Case Material: Molded Plastic. UL Flammability
K
M
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
J
· Terminals: Solderable per MIL-STD-202, Method 208
DF
L
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please see Ordering Information, Note 5, on
Page 3
· Orientation: See Diagram
· Marking: K78 (See Page 3)
C₁
C₂
(Jumper
connection
between
middle pins)
· Weight: 0.006 grams (approximate)
A₁
A₂
TOP VIEW
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
V_R(RMS)
I_FM
I_FSM
P_d
RqJA
T_j
TSTG
Value
70
49
70
100
200
625
-55 to +125
-65 to +125
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾ 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Unit
V
V
mA
mA
mW
°C/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min
V(BR)R
70
V_F
¾
IR
¾
C_T
¾
trr
¾
Max
Unit
¾
V
410
mV
1000
mV
100
nA
2.0
pF
5.0
ns
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Test Condition
I_R = 10mA
tp <300µs, IF = 1.0mA
t_p <300µs, I_F = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
Irr = 0.1 x I_R, R_L = 100W
DS30188 Rev. 10 - 2
1 of 3
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ã Diodes Incorporated