BAS70JW Datasheet, PDF (1/1 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

BAS70JW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Features
· Low Forward Voltage Drop
· Fast Switching
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and
ESD Protection
Mechanical Data
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Orientation: See Diagram
· Weight: 0.006 grams (approx.)
· Marking: K78
A
BC
H
K
J
DF
L
C₁
C₂
(Jumper
connection
between
middle pins)
A₁
A₂
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
M
G
1.80 2.20
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
70
V
VR
RMS Reverse Voltage
V_R(RMS)
49
V
Forward Continuous Current (Note 1)
I_FM
70
mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
I_FSM
100
mA
Power Dissipation (Note 1)
P_d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RqJA
625
K/W
Operating and Storage Temperature Range
T_j
TSTG
-55 to +125
-65 to +125
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
V_FM
¾
I_RM
¾
C_j
¾
t_rr
¾
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
Max
410
1000
100
2.0
5.0
Unit
mV
mV
nA
pF
ns
Test Condition
tp <300µs, IF = 1.0mA
t_p <300µs, I_F = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
Irr = 0.1 x I_R, R_L = 100W
DS30188 Rev. E-2
1 of 1
BAS70JW