BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams
· Approx. Weight: 0.008 grams
A
TOP VIEW
BC
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
M
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
BAS70 Marking: K73, K7C
BAS70-04 Marking: K74, K7D
BAS70-05 Marking: K75, K7E BAS70-06 Marking: K76, K7F
Maximum Ratings and Electrical Characteristics, Single Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
BAS70
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
70
V
V_R
RMS Reverse Voltage
V_R(RMS)
49
V
Forward Continuous Current (Note 1)
I_F
70
mA
Non-Repetitive Peak Forward Surge Current @ t_p < 1.0s
I_FSM
100
mA
Power Dissipation (Note 1)
P_d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R_qJA
625
K/W
Operating Junction Temperature Range
T_j
-55 to +125
°C
Storage Temperature Range
T_STG
-65 to +150
°C
Electrical Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
V_F
—
IRM
¾
C_j
¾
t_rr
—
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS11007 Rev. L-2
1 of 1
Max
410
1000
100
2.0
5.0
Unit
Test Condition
mV
tp <300µs, IF = 1.0mA
t_p <300µs, I_F = 15mA
nA
tp < 300µs, VR = 50V
pF
VR = 0V, f = 1.0MHz
ns
IF = IR = 10mA to IR = 1.0mA,
R_L =100W
BAS70/-04/-05/-06