BAS40V Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Pb
BAS40V
Lead-free
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Fast Switching
A
· PN Junction Guard Ring for Transient and
ESD Protection
· Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
· Case: SOT-563, Molded Plastic
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Marking & Type Code Information: See Last Page
· Ordering Information: See Last Page
· Weight: 0.003 grams (approx.)
D
G
K
H
C₁
NC
A₂
A₁
NC
C₂
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 2)
Forward Surge Current (Note 2)
Operating Temperature Range
Storage Temperature Range
@ t < 1.0s
Symbol
V_RRM
V_RWM
VR
I_FM
IFSM
T_j
TSTG
BC
M
L
Value
40
200
600
-55 to +125
-65 to +150
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Unit
V
mA
mA
°C
°C
Thermal Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient Air (Note 2)
Symbol
P_d
RqJA
Value
150
833
Unit
mW
°C/W
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage (Note 3)
Reverse Leakage Current (Note 3)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ
V(BR)R
40
—
VF
—
—
IR
—
20
C_T
—
4.0
trr
—
—
Max
—
380
1000
200
5.0
5.0
Note:
1. No purposefully added lead.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30561 Rev. 2 - 2
1 of 2
www.diodes.com
Unit
V
mV
nA
pF
ns
Test Condition
IR = 10mA
tp < 300ms, IF = 1.0mA
t_p < 300ms, I_F = 40mA
t_p < 300ms, V_R = 30V
V_R = 0V, f =1.0MHz
I_F = I_R = 10mA to I_R = 1.0mA,
RL = 100W
BAS40V
ã Diodes Incorporated