BAS40T_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SPICE MODELS: BAS40T BAS40-04T BAS40-05T BAS40-06T
BAS40T/-04T/-05T/-06T
Lead-free
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Fast Switching
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and ESD Protection
A
· Lead Free/RoHS Compliant (Note 3)
Mechanical Data
· Case: SOT-523
G
· Case Material: Molded Plastic. UL Flammability
H
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
K
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
J
D
leadframe).
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 2
· Weight: 0.002 grams (approximate)
· Ordering Information, see Page 2
TOP VIEW
BC
N
L
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
BAS40T Marking: 43
BAS40-04T Marking: 44
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
BAS40-05T Marking: 45
BAS40-06T Marking: 46
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_qJA
T_j
T_STG
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Value
40
28
200
600
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
Min
V_(BR)R
40
V_F
¾
I_R
¾
C_T
¾
trr
¾
Max
¾
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I_R = 10mA
I_F = 1.0mA, t_p < 300ms
I_F = 40mA, t_p < 300ms
VR = 30V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30265 Rev. 10 - 2
1 of 3
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BAS40T/-04T/-05T/-06T
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