BAS16_09 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode

BAS16 / MMBD4148 / MMBD914
SURFACE MOUNT SWITCHING DIODE
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Features
Mechanical Data
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance
• Qualified to AEC-Q101 Standards for High Reliability
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green' Device (Notes 3 and 4)
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
75
V
V_R
RMS Reverse Voltage
V_R(RMS)
53
V
Forward Continuous Current (Note 1)
I_FM
300
mA
Average Rectified Output Current (Note 1)
I_O
200
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
I_FSM
2.0
1.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J , T_STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
V_(BR)R
V_F
I_R
C_T
t_rr
75
⎯
0.715
⎯
0.855
1.0
1.25
1.0
⎯
50
30
25
⎯
2.0
⎯
4.0
V
I_R = 100μA
I_F = 1.0mA
V
I_F = 10mA
I_F = 50mA
I_F = 150mA
μA ^VR ^{= 75V}
μA VR = 75V, TJ = 150°C
μA V_R = 25V, T_J = 150°C
nA _{VR = 20V}
pF V_R = 0, f = 1.0MHz
ns
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in².
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured
prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
BAS16 / MMBD4148 / MMBD914
Document number: DS12003 Rev. 22 - 2
1 of 4
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July 2009
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