BAS116_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT LOW LEAKAGE DIODE

SPICE MODEL: BAS116
BAS116
Lead-free
SURFACE MOUNT LOW LEAKAGE DIODE
Features
· Surface Mount Package Ideally Suited for Automatic Insertion
· Very Low Leakage Current
· Lead Free/RoHS Compliant (Note 3)
A
Mechanical Data
BC
· Case: SOT-23
TOP VIEW
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
E
D
G
H
· Terminal Connections: Solderable per MIL-STD-202,
K
M
Method 208
J
L
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Polarity: See Diagram
· Marking: K50, K54 (See Page 3)
· Weight: 0.008 grams (approximate)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Symbol
V_RRM
V_RWM
VR
V_R(RMS)
I_FM
I_FRM
IFSM
Thermal Characteristics
Value
85
60
215
500
4.0
1.0
0.5
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
R_qJA
Tj , TSTG
Value
250
500
-65 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Unit
V
V
mA
mA
A
Unit
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max
V(BR)R
85
¾
¾
V_FM
¾
0.90
1.0
¾
1.1
1.25
IRM
¾
¾
5.0
80
CT
¾
2
¾
t_rr
¾
¾
3.0
Notes:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf. T_A = 25°C.
2. Short duration test pulse used to minimize self-heating effect.
3. No Purposefully added Lead.
DS30233 Rev. 7 - 2
1 of 3
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Unit
V
V
nA
nA
pF
ms
Test Condition
I_R = 100mA
I_F = 1.0mA
IF = 10mA
I_F = 50mA
I_F = 150mA
VR = 75V
V_R = 75V, T_j = 150°C
V_R = 0, f = 1.0MHz
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
BAS116
ã Diodes Incorporated