BAS116V Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT LOW LEAKAGE DIODE

BAS116V
Pb
Lead-free _{SURFACE MOUNT LOW LEAKAGE DIODE}
Features
· Surface Mount Package Ideally Suited for Automatic
Insertion
· Very Low Leakage Current
· Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
· Case: SOT-563, Molded Plastic
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Marking & Type Code Information: See Last Page
· Ordering Information: See Last Page
· Weight: 0.003 grams (approx.)
A
BC
D
G
K
H
M
L
C₁ NC A₂
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
A₁ NC C₂
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
VRWM
85
V
VR
RMS Reverse Voltage
V_R(RMS)
60
V
Forward Continuous Current (Note 2)
I_FM
215
mA
Repetitive Peak Forward Current
I_FRM
500
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
4.0
@ t = 1.0ms
IFSM
1.0
A
@ t = 1.0s
0.5
Operating and Storage Temperature Range
T_j , T_STG
-65 to +150
°C
Thermal Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Symbol
P_d
R_qJA
Value
150
833
Unit
mW
°C/W
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage (Note 3)
Leakage Current (Note 3)
Total Capacitance
Symbol Min
Typ
Max
V_(BR)R
85
¾
¾
V_FM
¾
0.90
¾
1.0
1.1
1.25
I_RM
¾
¾
5.0
80
C_T
¾
2
¾
Reverse Recovery Time
t_rr
¾
¾
3.0
Note:
1. No purposefully added lead.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
Unit
V
V
nA
nA
pF
ms
Test Condition
I_R = 100mA
I_F = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
V_R = 75V
VR = 75V, Tj = 150°C
VR = 0, f = 1.0MHz
I_F = I_R = 10mA,
Irr = 0.1 x IR, RL = 100W
DS30562 Rev. 2 - 2
1 of 2
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BAS116V
ã Diodes Incorporated