B170_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SPICE MODELS: B170 B180 B190 B1100
B170B B180B B190B B1100B
B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Guard Ring Die Construction for Transient Protection
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 30A Peak
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
· High Temperature Soldering: 260°C/10 Second at Terminal
A
· Lead Free Finish/RoHS Compliant (Note 3)
Mechanical Data
· Case: SMA / SMB
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Lead Free Plating (Matte Tin Finish).
Solderable per MIL-STD-202, Method 208 e3
· Polarity: Cathode Band or Cathode Notch
· Marking: Type Number
· SMA Weight: 0.064 grams (approximate)
· SMB Weight: 0.093 grams (approximate)
J
H
B
SMA
Dim
SMB
Min Max Min Max
A 2.29 2.92 3.30 3.94
C
B 4.00 4.60 4.06 4.57
C 1.27 1.63 1.96 2.21
D 0.15 0.31 0.15 0.31
D
E 4.80 5.59 5.00 5.59
G 0.10 0.20 0.10 0.20
H 0.76 1.52 0.76 1.52
G
J 2.01 2.30 2.00 2.40
E
All Dimensions in mm
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
V_R
RMS Reverse Voltage
V_R(RMS)
Average Rectified Output Current
@ TT = 125°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
I_FSM
Forward Voltage @ IF = 1.0A
@ TA = 25°C
@ T_A = 100°C
VFM
Peak Reverse Current
at Rated DC Blocking Voltage
@ T_A = 25°C
@ TA = 100°C
I_RM
Typical Total Capacitance (Note 2)
C_T
Typical Thermal Resistance Junction to Terminal (Note 1) RqJT
Operating and Storage Temperature Range
T_j, T_STG
B170/B
70
49
B180/B
B190/B
80
90
56
63
1.0
30
0.79
0.69
0.5
5.0
80
25
-65 to +150
B1100/B Unit
100
V
70
V
A
A
V
mA
pF
°C/W
°C
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7.
DS30018 Rev. 6 - 2
1 of 3
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B170/B - B1100/B
ã Diodes Incorporated