2N7002_10 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
Top View
Drain
Gate
Source
Equivalent Circuit
D
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
2N7002-7-F
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K7x
K7x = Product Type Marking Code, e.g. K72
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999 2000 2001
K
L
M
Feb
Mar
2
3
2002
N
Apr
4
2003 2004 2005 2006 2007
P
R
S
T
U
May
Jun
5
6
Jul
Aug
7
8
2008
V
Sep
9
2009 2010 2011
W
X
Y
Oct
Nov
O
N
2012
Z
Dec
D
2N7002
Document number: DS11303 Rev. 24 - 2
1 of 5
www.diodes.com
November 2010
© Diodes Incorporated