2N7002_ Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: 2N7002
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
A
D
G TOP VIEW S
E
D
G
H
BC
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking: K72, K7A, K7B (See Page 2)
• Ordering & Date Code Information: See Page 2
• Weight: 0.008 grams (approximate)
K
M
J
L
Drain
Gate
Source
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
V_DSS
V_DGR
VGSS
ID
P_d
R_θJA
T_j, T_STG
Value
60
60
±20
±40
115
73
800
300
2.4
417
-55 to +150
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
mW
mW/°C
°C/W
°C
DS11303 Rev. 19- 2
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2N7002
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