2N7002W_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low-On Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
Drain
D
TOP VIEW
Gate
Source
Equivalent Circuit
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 1.0MΩ
Gain-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Symbol
V_DSS
V_DGR
V_GSS
I_D
Value
60
60
±20
±40
115
73
800
Unit
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
1.60
625
-55 to +150
Unit
mW
mW
°C /W
°C
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
2N7002W
Document number: DS30099 Rev. 14 - 2
1 of 3
www.diodes.com
August 2008
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