2N7002W Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
Mechanical Data
· Case: SOT-323, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K72
· Weight: 0.006 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SOT-323
Dim Min Max
A
0.30 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
M
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
V_DSS
VDGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
2N7002W
60
60
±20
±40
115
73
800
200
1.60
625
-55 to +150
Units
V
V
V
mA
mW
mW/°C
K/W
°C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30099 Rev. 4P-1
1 of 3
2N7002W