2N7002VC_07 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002VC/VAC
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram (Note 1)
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.003 grams (approximate)
SOT-563
D₂
G₁
S₁
D₂
S₁
G₁
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 1.0MΩ
Gate-Source Voltage (Note 2)
Drain Current (Note 2)
Drain Current (Note 2)
Continuous
Pulsed
Continuous
Pulsed
S₂
G₂
D₁
2N7002VC
(ASK Marking Code)
G₂
S₂
D₁
2N7002VAC
(AYK Marking Code)
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DM
Value
60
60
±20
±40
280
1.5
Units
V
V
V
mA
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T_C = 25°C
@ T_C = 125°C
ON CHARACTERISTIC (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS
I_DSS
I_GSS
60 70 ⎯
V V_GS = 0V, I_D = 10mA
1.0
⎯ ⎯ ₅₀₀ µA V_DS = 60V, V_GS = 0V
⎯ ⎯ ±100 nA V_GS = ±20V, V_DS = 0V
V_GS(th) 1.0 ⎯ 2.5
V V_DS = V_GS, I_D = 250μA
⎯
R_{DS (ON) ⎯}
⎯
⎯
7.5
13.5
Ω
V_GS = 5V, I_D = 0.05A,
V_GS = 10V, I_D = 0.5A, T_j = 125°C
I_D(ON) 0.5 1.0 ⎯
A V_GS = 10V, V_DS = 7.5V
g_FS
80 ⎯ ⎯ mS V_DS = 10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯ ⎯ 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
⎯ ⎯ 5.0 pF
t_D(ON)
⎯ ⎯ 20
t_D(OFF) ⎯ ⎯ 20
ns _{VDD = 30V, ID = 0.2A, RL = 150Ω,}
ns ^VGEN ^{= 10V, R}GEN ^{= 25Ω}
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
2N7002VC/VAC
Document number: DS30639 Rev. 5 - 2
1 of 3
www.diodes.com
October 2007
© Diodes Incorporated