2N7002T Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
Mechanical Data
· Case: SOT-523, Molded Plastic
· Case Material UL Flammability Rating: 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: 72 (See Page 3)
· Weight: 0.002 grams (approx.)
· Ordering Information, see Page 3
TOP VIEW
A
D
BC
G
S
G
H
K
N
J
D
L
Drain
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
M
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
Gate
Source
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
V_DSS
V_DGR
VGSS
ID
P_d
RqJA
T_j, T_STG
Value
60
60
±20
±40
115
73
800
150
833
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
DS30301 Rev. 2 - 2
1 of 3
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2N7002T