2N7002K_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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SOT-23
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
ESD protected up to 2kV
TOP VIEW
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
G
S
TOP VIEW
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 ⎯
⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯ ⎯ 1.0 μA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_GS = ±20V, V_DS = 0V
V_GS(th) 1.0 1.6 2.5 V V_DS = 10V, I_D = 1mA
R_{DS (ON)} ⎯
⎯ 2.0
⎯ 3.0
Ω ^{VGS = 10V, ID = 0.5A}
V_GS = 5V, I_D = 0.05A
|Y_fs|
80 ⎯ ⎯ ms V_DS =10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯
⎯
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
⎯ ⎯ 5.0 pF
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
2N7002K
Document number: DS30896 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated