2N7002E_10 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 2 and 4)
• Case: SOT-23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
D
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Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 1.0MΩ
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Continuous
G
S
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Pin Out Configuration
Symbol
V_DSS
V_DGR
V_GSS
I_D
Value
60
60
±20
±40
240
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T_C = 25°C
@ T_C = 125°C
@ T_J = 25°C
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 70 ⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯ ⎯ 1.0 µA V_DS = 60V, V_GS = 0V
500
I_GSS
⎯ ⎯ ±10 nA V_GS = ±15V, V_DS = 0V
V_GS(th) 1.0
⎯
2.5
V V_DS = V_GS, I_D = 250μA
R_{DS (ON)} ⎯ 1.6
3
⎯ ^{2.0 4}
Ω V_GS = 10V, I_D = 250mA
V_GS = 4.5V, I_D = 200mA
I_D(ON)
0.8 1.0 ⎯
A V_GS = 10V, V_DS = 7.5V
g_FS
80 ⎯ ⎯ mS V_DS =10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ 22 50 pF
⎯ 11 25 pF ^VDS ^{= 25V, V}GS ^{= 0V, f = 1.0MHz}
⎯ 2.0 5.0 pF
t_D(ON)
t_D(OFF)
⎯ 7.0 20
⎯ 11 20
ns V_DD = 30V, I_D = 0.2A,
ns R_L = 150Ω, V_GEN = 10V, R_GEN = 25Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V12 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
2N7002E
Document number: DS30376 Rev. 8 - 2
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated