2N7002E Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel TrenchMOS FET

SPICE MODEL: 2N7002E
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: R_DS(ON)
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Lead Free/RoHS Compliant (Note 2)
A
D
BC
Mechanical Data
G TOP VIEW S
E
D
G
· Case: SOT-23
H
· Case Material: UL Flammability Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
K
M
J
L
· Lead Free Plating (Matte Tin Finish annealed
· over Alloy 42 leadframe).
· Terminal Connections: See Diagram
· Marking (See Page 2): K7B
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed
Continuous
Symbol
VDSS
VDGR
V_GSS
ID
Pd
RqJA
T_j, T_STG
Value
60
60
±20
±40
240
300
417
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
mW
°C/W
°C
DS30376 Rev. 5 - 2
1 of 4
www.diodes.com
2N7002E
ã Diodes Incorporated