2N7002 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: RDS(ON)
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K72, K7A
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
M
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
V_DSS
VDGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Short duration test pulse used to minimize self-heating effect.
Value
60
60
±20
±40
115
73
800
200
1.60
625
-55 to +150
Units
V
V
V
mA
mW
mW/°C
°C/W
°C
DS11303 Rev. K-2
1 of 3
2N7002