2N7000 Datasheet, PDF (1/1 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2– NOVEMBER 94
2N7000
S
G
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Vootage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CES
I_D
I_DM
V_GS
P_tot
T_j:T_stg
TO92
VALUE
60
0.2
0.5
±40
400
-55 to +150
UNIT
V
A
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS
60
V
I_D=10µA, V_GS=0V
Gate-Source Threshold Voltage V_GS(th) 0.8 3.0 V
ID=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
10
nA V_GS=± 15V, V_DS=0V
Zero Gate Voltage Drain Current I_DSS
1
µA V_DS=48V, V_GS=0
1
mA V_DS=48V, V_GS=0V, T=125°C(2)
On-State Drain Current(1)
I_D(on)
75
mA V_DS=10V, V_GS=4.5V
Static Drain-Source On-State
Voltage (1)
V_DS(on)
2.5 V
0.4 V
V_GS=10V,I_D=500mA
V_GS=4.5V,I_D=75mA
Static Drain-Source On-State
Resistance (1)
R_DS(on)
5
Ω
V_GS=10V,I_D=500mA
Forward Transconductance(1)(2) g_fs
Input Capacitance (2)
C_iss
Common Source Output
C_oss
Capacitance (2)
100
60
25
mS V_DS=10V,I_D=200mA
pF
pF V_DS=25V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance (2) C_rss
5
pF
Turn-On Time (2)(3)
t_(on)
10
ns V_DD≈15V, I_D=500mA
Turn-Off Time (2)(3)
t_(off)
10
ns
R_g=25Ω, R_L=25Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3-12