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| 2N6732 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 80 Volt VCEO
* Gain of 100 at IC = 350 mA
* Ptot=1 Watt
2N6732
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-100
-80
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -100
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-1mA, IC=0
Collector Cut-Off
ICBO
Current
-0.1 µA
VCB=-80V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-10 µA
-0.35 V
VEB=-5V, IC=0
IC=-350mA, IB=-35mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0 V
IC=-350mA, VCE=-2V*
Static Forward Current hFE
100
Transfer Ratio
100
Transition
Frequency
fT
50
IC=-10mA, VCE=-2V*
300
IC=-350mA, VCE=-2V*
500 MHz IC=-200mA, VCE=-5V
f=20MHz
Collector-Base
CCB
Capacitance
20
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-11
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