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| 2N6731 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 80 Volt VCEO
* Gain of 100 at IC = 350 mA
* Ptot=1 Watt
2N6731
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
100
80
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=1mA, IC=0
Collector Cut-Off
ICBO
Current
0.1
µA
VCB=80V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
10
µA
0.35 V
VEB=5V, IC=0
IC=350mA, IB=35mA*
Base-Emitter Turn-On VBE(on)
Voltage
1.0 V
IC=350mA, VCE=2V*
Static Forward Current hFE
100
Transfer Ratio
100
Transition
Frequency
fT
50
IC=10mA, VCE=2V*
300
IC=350mA, VCE=2V*
500 MHz IC=200mA, VCE=5V
f=20MHz
Collector-Base
CCB
Capacitance
20
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-10
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