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| 2N6728 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
* Ptot=1 Watt
2N6728
2N6729
2N6730
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL 2N6728
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-60
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb= 25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
C
B
E
E-Line
TO92 Compatible
2N6729 2N6730
-80
-100
-80
-100
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Collector Base
Capacitance
IEBO
VCE(sat)
VBE(on)
hFE
fT
CCB
-60
-80
-100
V IC=-0.1mA, IE=0
-60
-80
-100
V IC=-1mA, IB=0*
-5
-5
-5
V IE=-1mA, IC=0
-1
µA VCB=-60V, IE=0
-1
µA VCB=-80V, IE=0
-1 µA VCB=-100V, IE=0
-1
-1
-1 µA VEB=-5V, IC=0
-0.5
-0.35
-1.2
-0.5
-0.35
-1.2
-0.5 V
-0.35
-1.2 V
IC=-250mA,IB=-10mA*
IC=-250mA,IB=-25mA*
IC=-250mA, VCE=-1V*
80
80
80
50 250 50 250 50 250
20
20
20
IC=-50mA, VCE=-1V*
IC=-250mA, VCE=-1V*
IC=-500mA, VCE=-1V*
50 500 50 500 50 500 MHz IC=-50mA, VCE=-10V
30
30
30 pF VCE=-10V, f=1MHz
3-9
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