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| 2N67267 Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SILICON PLANAR TRANSISTORS | |||
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Not Recommended for New Design
Please Use ZTX549 / ZTX751
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 40 Volt VCEO
* Gain of 50 at IC = 1 Amp
* Ptot=1 Watt
2N6726
2N6727
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
2N6726 2N6727
-40
-50
-30
-40
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6726
2N6727 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -40
-50
V
IC=-1mA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO -30
-40
V
IC=-10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
-5
V
IE=-1mA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
-0.1
µA
VCB=-40V, IE=0
-0.1 µA
VCB=-50V, IE=0
-0.1
-0.1 µA
VEB=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.5 V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.2
-1.2 V
IC=-1A, VCE=-1V*
Static Forward
hFE
Current Transfer Ratio
Transition
fT
Frequency
55
55
60
60
50
250 50
250
IC=-10mA, VCE=-1V*
IC=-100mA, VCE=-1V*
IC=-1A, VCE=-1V*
50
500 50
500 MHz IC=-50mA, VCE=-10V
Collector Base
CCB
Capacitance
30
30
pF
VCE=-10V, f=1MHz
3-8
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