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| 2N6716 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
* Ptot=1 Watt
2N6716
2N6717
2N6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL 2N6716
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
60
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb= 25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
C
B
E
E-Line
TO92 Compatible
2N6717 2N6718
80
100
80
100
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
V(BR)CBO 60
80
100
V IC=0.1mA, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO 60
80
100
V IC=1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO
5
5
5
V IE=1mA, IC=0
Breakdown Voltage
Collector Cut-Off ICBO
Current
Emitter Cut-Off
IEBO
Current
1
µA VCB=60V, IE=0
1
µA VCB=80V, IE=0
1
µA VCB=100V, IE=0
1
1
1
µA VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
VCE(sat)
VBE(on)
0.5
0.5
0.5 V IC=250mA, IB=10mA*
0.35
0.35
0.35
IC=250mA,IB=25mA*
1.2
1.2
1.2 V IC=250mA, VCE=1V*
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
80
80
80
50 250 50 250 50 250
20
20
20
IC=50mA, VCE=1V*
IC=250mA, VCE=1V*
IC=500mA, VCE=1V*
50 500 50 500 50 500 MHz IC=50mA, VCE=10V
Collector Base
CCB
Capacitance
30
30
30 pF VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-6
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