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| 2N6520 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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Not Recommended for New Design
Please Use FMMT558
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=-100mA
2N6520
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
-350
-350
-5
-250
-500
680
-55 to +200
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -350
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -350
V
IC=-1mA, IB=0*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-10µA, IC=0
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
VBE(sat)
VBE(on)
-50
nA
-50
nA
-0.3
V
-0.35 V
-0.5
V
-1.0
V
-0.80 V
-0.85 V
-0.90 V
-2.0
V
VCB=-250V, IE=0
VEB=-4V, IC=0
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-50mA, IB=-5mA*
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-100mA, VCE=-10V*
Static Forward Current
hFE
Transfer Ratio
Transition Frequency
fT
20
30
30
200
20
200
15
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
40
MHz
IC=-10mA, VCE=-20V,
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-4
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