2DD2679 Datasheet, PDF (1/4 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

2DD2679
LOW V_CE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type (2DB1714) Available
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
C4
2C
1B
TOP VIEW
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
30
30
6
4
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A = 25°C
Power Dissipation (Note 4) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_STG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
Max
V_(BR)CBO
30
⎯
⎯
V_(BR)CEO
30
⎯
⎯
V_(BR)EBO
6
⎯
⎯
I_CBO
⎯
⎯
0.1
I_EBO
⎯
⎯
0.1
V_CE(SAT)
⎯
80
370
h_FE
270
⎯
680
Unit
V
V
V
μA
μA
mV
⎯
Output Capacitance
C_obo
⎯
11
⎯
pF
Current Gain-Bandwidth Product
f_T
⎯
240
⎯
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch² Copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
I_C = 10μA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10μA, I_C = 0
V_CB = 30V, I_E = 0
V_EB = 6V, I_C = 0
I_C = 1.5A, I_B = 75mA
V_CE = 2V, I_C = 200mA
V_CB = 10V, I_E = 0,
f = 1MHz
V_CE = 2V, I_C = 100mA,
f = 100MHz
2DD2679
Document number: DS31629 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated