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2DD2098R Datasheet, PDF (1/4 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR | |||
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Features
⢠Epitaxial Planar Die Construction
⢠Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
⢠Complementary PNP Type Available (2DB1386)
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
Mechanical Data
⢠Case: SOT89-3L
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.072 grams (approximate)
2DD2098R
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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SOT89-3L
3E
COLLECTOR
2,4
C4
2C
1B
1
BASE
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
ICM
IC
Symbol
PD
RθJA
TJ, TSTG
Value
50
20
6
10
5
Value
1
125
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min
Typ
Max
V(BR)CBO
50
â¯
â¯
V(BR)CEO
20
â¯
â¯
V(BR)EBO
6
â¯
â¯
ICBO
â¯
â¯
0.5
IEBO
â¯
â¯
0.5
VCE(SAT)
â¯
0.3
1.0
hFE
180
â¯
390
fT
â¯
220
â¯
Cob
â¯
14
â¯
Unit
V
V
V
μA
μA
V
â¯
MHz
pF
Conditions
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 40V, IE = 0
VEB = 5V, IC = 0
IC = 4A, IB = 0.1A
IC = 0.5A, VCE = 2V
VCE = 6V, IE = -50mA
f = 100MHz
VCB = 20V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
DS31299 Rev. 4 - 2
1 of 4
www.diodes.com
2DD2098R
© Diodes Incorporated
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