2DD1664P Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

2DD1664P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1132)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SOT89-3L
3E
COLLECTOR
2,4
C4
2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Value
40
32
5
2
1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min
V_(BR)CBO
40
V_(BR)CEO
32
V_(BR)EBO
5
I_CBO
⎯
I_EBO
⎯
V_CE(SAT)
⎯
2DD1664P
82
2DD1664Q h_FE
120
2DD1664R
180
f_T
⎯
C_ob
⎯
Typ
⎯
⎯
⎯
⎯
⎯
0.12
⎯
⎯
⎯
280
10
Max
⎯
⎯
⎯
0.5
0.5
0.4
180
270
390
⎯
⎯
Unit
V
V
V
μA
μA
V
⎯
⎯
⎯
MHz
pF
Conditions
I_C = 50μA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50μA, I_C = 0
V_CB = 20V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 500mA, I_B = 50mA
V_CE = 3V, I_C = 100mA
V_CE = 5V, I_E = -50mA,
f = 100MHz
V_CB = 10V, I_E = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31143 Rev. 4 - 2
1 of 4
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2DD1664P/Q/R
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