2DD1621T_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T_A = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
2DD1621T
NPN SURFACE MOUNT TRANSISTOR
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SOT89-3L
3E
COLLECTOR
2,4
C4
2C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
30
25
6.0
2.0
Unit
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
Min
30
25
6.0
⎯
⎯
200
65
⎯
⎯
f_T
⎯
C_obo
⎯
t_on
⎯
t_stg
⎯
t_f
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.12
0.9
300
16
70
170
25
Max
⎯
⎯
⎯
100
100
400
⎯
0.4
1.2
⎯
⎯
⎯
⎯
⎯
Unit
Test Conditions
V I_C = 10μA, I_E = 0
V I_C = 1mA, I_B = 0
V I_C = 10μA, I_C = 0
nA V_CB = 20V, I_E = 0
nA V_EB = 4.0V, I_C = 0
⎯
V_CE = 2.0V, I_C = 0.1A
V_CE = 2.0V, I_C = 1.5A
V I_C = 1.5A, I_B = 75mA
V I_C = 1.5A, I_B = 75mA
MHz
V_CE = 10V, I_C = 50mA,
f = 100MHz
pF V_CB = 10V, I_E = 0, f = 1MHz
ns
ns
ns
V_CE = 12V, V_BE = 5V,
I_B1 = I_B2 = 25mA, I_C = 500mA
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31240 Rev. 2 - 2
1 of 4
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2DD1621T
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