2DC4617QLP Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Complementary PNP Type Available (2DA1774QLP)
• Ultra-Small Leadless Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Ordering Information: See Page 3
• Marking Information: See Page 3
• Weight: 0.0009 grams
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
2DC4617QLP
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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BOTTOM VIEW
1
C
E³
B²
TOP VIEW
(Internal Schematic)
DFN1006-3
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
50
50
5.0
100
200
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
C_obo
f_T
Min
50
50
5.0
⎯
⎯
120
⎯
⎯
100
Max
⎯
⎯
⎯
100
5
100
270
0.2
3.5
⎯
Unit
Test Condition
V
V
V
nA
μA
nA
⎯
V
pF
MHz
I_C = 50μA, I_E = 0
I_C = 1.0mA, I_B = 0
I_E = 50μA, I_C = 0
V_CB = 30V
V_CB = 30V, T_A = 150°C
V_EB = 4.0V
V_CE = 6.0V, I_C = 1.0mA
I_C = 50mA, I_B = 5.0mA
V_CB = 12V, f = 1.0MHz, I_E = 0
V_CE = 12V, I_C = 2.0mA,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Part mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS31439 Rev. 3 - 2
1 of 3
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2DC4617QLP
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