2DC2412R Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

2DC2412R
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.008 grams (approximate)
SOT-23
C
B
E
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
60
50
7.0
150
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
C_obo
f_T
Min Typ Max
60
⎯⎯
50
⎯⎯
7.0 ⎯ ⎯
⎯
⎯ 100
⎯
⎯ 100
180 ⎯ 390
⎯ 0.2 0.4
⎯ 2.0 3.5
80 180 ⎯
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 50μA, I_C = 0
nA V_CB = 60V, I_E = 0
nA V_EB = 7.0V, I_E = 0
⎯ V_CE = 6.0V, I_C = 1.0mA
V I_C = 50mA, I_B = 5.0mA
pF V_CB = 5V, f = 1.0MHz, I_E = 0
MHz V_CE = 12V, I_C = 2mA, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 2 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31241 Rev. 2 - 2
1 of 3
www.diodes.com
2DC2412R
© Diodes Incorporated