|
2DB1713_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR | |||
|
2DB1713
Features
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Mechanical Data
⢠Epitaxial Planar Die Construction
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Complementary NPN Type Available (2DD2678)
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Case: SOT89-3L
⢠Case Material: Molded Plastic, "Greenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
C4
2C
1B
TOP VIEW
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-15
-12
-6
-6
-3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
-15
-12
-6
â¯
â¯
â¯
270
Typ
â¯
â¯
â¯
â¯
â¯
-120
â¯
Max
â¯
â¯
â¯
-0.1
-0.1
-250
680
Unit
V
V
V
μA
μA
mV
â¯
Output Capacitance
Cobo
â¯
40
â¯
pF
Current Gain-Bandwidth Product
fT
â¯
180
â¯
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
Conditions
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -15V, IE = 0
VEB = -6V, IC = 0
IC = -1.5A, IB = -30mA
VCE = -2V, IC = -500mA
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IC = -100mA,
f = 100MHz
2DB1713
Document number: DS31634 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
|
▷ |