2DB1689 Datasheet, PDF (1/4 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary NPN Type Available (2DD2652)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
2DB1689
LOW V_CE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
Top View
B
E
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-15
-12
-6
-1.5
-3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T_A = 25°C
Power Dissipation (Note 4) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_STG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
Min
-15
-12
-6
⎯
⎯
⎯
270
Typ
⎯
⎯
⎯
⎯
⎯
-110
⎯
Max
⎯
⎯
⎯
-0.1
-0.1
-200
680
Unit
V
V
V
μA
μA
mV
⎯
Output Capacitance
C_obo
⎯
8.5
⎯
pF
Current Gain-Bandwidth Product
f_T
⎯
300
⎯
MHz
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch² copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
I_C = -10μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -10μA, I_C = 0
V_CB = -15V, I_E = 0
V_EB = -6V, I_C = 0
I_C = -500mA, I_B = -25mA
V_CE = -2V, I_C = -200mA
V_CB = -10V, I_E = 0,
f = 1MHz
V_CE = -2V, I_C = -100mA,
f = 100MHz
2DB1689
Document number: DS31639 Rev. 2 - 2
1 of 4
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December 2008
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