2DB1424R Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (2DD2150)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
2DB1424R
PNP SURFACE MOUNT TRANSISTOR
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SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
Symbol
P_D
R_θJA
T_J, T_STG
Value
-20
-20
-6
-5
-3
Value
1
125
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
Min
-20
-20
-6
⎯
⎯
⎯
180
Typ
⎯
⎯
⎯
⎯
⎯
-0.18
⎯
Max
⎯
⎯
⎯
-0.1
-0.1
-0.5
390
C_obo
⎯
28
⎯
f_T
⎯
220
⎯
Unit
V
V
V
μA
μA
V
⎯
Conditions
I_C = -50μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -50μA, I_C = 0
V_CB = -20V, I_E = 0
V_EB = -5V, I_C = 0
I_C = -2A, I_B = -0.1A
V_CE = -2V, I_C = -0.1A
pF
MHz
V_CB = -10V, I_E = 0,
f = 1MHz
V_CE = -2V, I_E = 0.1A,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31329 Rev. 2 - 2
1 of 4
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2DB1424R
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