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2DB1386Q Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR | |||
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2DB1386Q/R
PNP SURFACE MOUNT TRANSISTOR
Features
⢠Epitaxial Planar Die Construction
⢠Ideally Suited for Automated Assembly Processes
⢠Ideal for Medium Power Switching or Amplification Applications
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
Mechanical Data
⢠Case: SOT89-3L
⢠Case Material: Molded Plastic, "Greenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
⢠Marking & Type Code Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
SOT89-3L
COLLECTOR
3E
2,4
C4
2C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-30
-20
-6
-10
-5
Unit
V
V
V
A
A
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
-30
V(BR)CEO
-20
V(BR)EBO
-6
ICBO
â¯
IEBO
â¯
VCE(SAT)
â¯
2DB1386Q
120
2DB1386R hFE
180
Cobo
â¯
fT
â¯
Typ
â¯
â¯
â¯
â¯
â¯
-0.25
â¯
â¯
55
100
Max
â¯
â¯
â¯
-0.5
-0.5
-1.0
270
390
â¯
â¯
Unit
V
V
V
μA
μA
V
â¯
Conditions
IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -20V, IE = 0
VEB = -5V, IC = 0
IC = -4A, IB = -0.1A
IC = -0.5A, VCE = -2V
pF
VCB = -20V, IE = 0,
f = 1MHz
pF
VCE = -6V, IE = 50mA,
f = 30MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
DS31147 Rev. 5 - 2
1 of 4
www.diodes.com
2DB1386Q/R
© Diodes Incorporated
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