2DB1184Q Datasheet, PDF (1/5 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

2DB1184Q
PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: TO252-3L
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.34 grams (approximate)
COLLECTOR
3
BASE
4
2
1
Top View
EMITTER
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Pin Out Configuration
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-60
-50
-5
-3
-4.5
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @T_A = 25°C
Thermal Resistance, Junction to Case
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJC
P_D
R_θJA
T_J, T_STG
Value
15
8.3
1.2
104
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max Unit
Test Condition
V_(BR)CBO -60
⎯
⎯
V I_C = -50μA, I_E = 0
V_(BR)CEO -50
⎯
⎯
V I_C = -1mA, I_B = 0
V_(BR)EBO
-5
⎯
⎯
V I_E = -50μA, I_C = 0
I_CBO
⎯
⎯
-1
μA V_CB = -40V, I_E = 0
I_EBO
⎯
⎯
-1
μA V_EB = - 4V, I_C = 0
V_CE(SAT)
⎯
⎯
-1
V I_C = -2A, I_B = -0.2A
V_BE(SAT)
⎯
⎯
-1.2
V I_C = -1.5A, I_B = -0.15A
h_FE
120
⎯
270
⎯ V_CE = -3V, I_C = -0.5A
f_T
C_obo
⎯
110
⎯
MHz
V_CE = -5V, I_C = -0.1A,
f = 30MHz
⎯
26
⎯
pF V_CB = -10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1184Q
Document number: DS31504 Rev. 3 - 2
1 of 5
www.diodes.com
August 2009
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