2DA1774Q Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

2DA1774Q/R/S
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Ultra Miniature Surface Mount Package
· Complementary NPN Type Available
(2DC4617Q,R,S)
A
Mechanical Data
C
· Case: SOT-523, Molded Plastic
TOP VIEW B C
· Case material - UL Flammability Rating
Classification 94V-0
B
E
G
· Moisture sensitivity: Level 1 per J-STD-020A
H
· Terminals: Solderable per MIL-STD-202,
Method 208
K
M
· Terminal Connections: See Diagram
· Marking (See Page 2): 2DA1774Q: 8A
2DA1774R: 8B
2DA1774S: 8C
J
D
L
· Ordering & Date Code Information: See Page 2
· Weight: 0.002 grams (approx.)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
VEBO
IC
Pd
RqJA
Tj, TSTG
2DA1774Q/R/S
-60
-50
-6.0
150
150
833
-55 to +150
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-60
-50
-6.0
¾
¾
2DA1774Q
120
2DA1774R
h_FE
180
2DA1774S
270
VCE(SAT)
¾
Cobo
f_T
4.0 Typ.
140 Typ.
Max
¾
¾
¾
-100
-100
270
390
560
-0.5
5.0
¾
Unit
Test Condition
V
IC = -50mA, IE = 0
V
I_C = 1.0mA, I_B = 0
V
IE = -50mA, IC = 0
nA
V_CB = -60V
nA
VEB = -6.0V
¾
V_CE = -6.0V, I_C = -1.0mA
V
IC = -50mA, IB = -5.0mA
pF
MHz
VCB = -12V, f = 1.0MHz, IE = 0
VCE = -12V, IC = -2.0mA,
f = 30MHz
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
DS30253 Rev. 4 - 2
1 of 2
2DA1774Q/R/S