1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

1N914 / 1N914A / 1N914B
FAST SWITCHING
DIODE
Features
· Fast Switching Speed
· High Reliability
· High Conductance
· For General Purpose Switching Applications
Mechanical Data
· Case: DO-35, Glass
· Terminals: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Weight: 0.013 grams (approx.)
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
(Note 1)
1N914
1N914A/B
Average Rectified Output Current
(Note 1)
1N914
1N914A/B
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
1N914 @ t = 1.0ms
1N914A/B @ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_qJA
Tj , TSTG
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage
Symbol
Min
1N914B
0.62
1N914B
1N914
V_FM
¾
¾
1N914A
¾
Maximum Peak Reverse Current
I_RM
¾
Capacitance
Reverse Recovery Time
C_j
¾
t_rr
¾
Value
100
75
53
150
300
75
200
1.0
1.0
4.0
500
1.68
300
-65 to +175
Max
Unit
0.72
1.0
1.0
V
1.0
5.0
mA
50
mA
25
nA
4.0
pF
4.0
ns
Notes: 1. Valid provided that lead are kept at ambient temperature at a distance of 8.0mm.
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Test Condition
IF = 5.0mA
I_F = 100mA
I_F = 10mA
I_F = 20mA
VR = 75V
V_R = 20V, T_j = 150°C
V_R = 20V
VR = 0, f = 1.0MHz
IF = 10mA to IR =1.0mA
V_R = 6.0V, R_L = 100W
DS22001 Rev. E-4
1 of 2
1N914 / 1N914A / 1N914B