1N6263 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

1N6263
SCHOTTKY BARRIER SWITCHING DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Switching Time
· Low Reverse Capacitance
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.13 grams (approx.)
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
VRWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
RqJA
T_j
T_STG
1N6263
60
42
15
50
2.0
400
300
-55 to +125
-55 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage Drop (Note 2)
Reverse Leakage Current (Note 2)
Junction Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max Unit
Test Condition
V_(BR)R
60
¾
¾
V
I_R = 10mA
VF
¾
¾
0.41
1.0
V
IF = 1.0mA
I_F = 15mA
IR
¾
¾
200
nA VR = 50V
C_j
¾
¾
2.2
pF VR = 0V, f = 1.0MHz
trr
¾
¾
1.0
ns
IF = IR = 5.0mA,
I_rr = 0.1 x I_R, R_L = 100W
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Short duration test pulses used to minimize self-heating effect.
DS11010 Rev. F-2
1 of 2
1N6263