1N5819HW_10 Datasheet, PDF (1/4 Pages) Diodes Incorporated – 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

1N5819HW
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 4)
Mechanical Data
• Case: SOD-123
• Plastic Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity: Cathode Band
• Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead
Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.01 grams (approximate)
Top View
Maximum Ratings @T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@ I_R = 1.0mA
RMS Reverse Voltage
Average Rectified Output Current
Repetitive Peak Forward Current
@ T_L = 90°C
t_{p ≤} 1ms, δ ≤ 0.5
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FRM
I_FSM
Value
40
28
1.0
1.5
25
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
450
222
-65 to +125
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage
Reverse Leakage Current (Note 3)
Total Capacitance
Symbol Min
V_(BR)R
40
⎯
V_F
⎯
⎯
⎯
⎯
I_R
⎯
⎯
⎯
⎯
C_T
⎯
Typ
Max Unit
Test Condition
⎯
⎯
V I_R = 1.0mA
⎯
0.320
I_F = 0.1A
⎯
0.450
V I_F = 1.0A
⎯
0.750
I_F = 3.0A
⎯
1.0
mA ^VR ^{= 40V, T}A ^{= 25°C}
⎯
10
mA VR = 40V, TA = 100°C
10
50
μA VR = 4V, TA = 25°C
1
2
mA V_R = 4V, T_A = 100°C
15
75
μA _{VR = 6V, TA = 25°C}
1.5
3
mA _{VR = 6V, TA = 100°C}
50
60
pF V_R = 4V, f = 1.0MHz
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x1.0".
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
1N5819HW
Document number: DS30217 Rev. 15 - 2
1 of 4
www.diodes.com
February 2010
© Diodes Incorporated