1N5711 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

1N5711
SCHOTTKY BARRIER SWITCHING DIODE
Features
· Ultra-Fast Switching Speed
· High Reverse Breakdown Voltage
· Low Forward Voltage Drop
· Guard Ring Junction Protection
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.13 grams (approx.)
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
VRWM
V_R
V_R(RMS)
I_FM
P_d
R_qJA
Tj
T_STG
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop (Note 2)
Junction Capacitance
Reverse Recovery Time
Symbol
Min
V_(BR)R
70
I_R
¾
V_F
¾
C_j
¾
t_rr
¾
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Short duration test pulse used to minimize self-heating effect.
1N5711
70
49
15
400
300
-55 to +125
-55 to +150
Unit
V
V
mA
mW
°C/W
°C
°C
Max
¾
200
0.41
1.00
2.0
1.0
Unit
V
nA
V
pF
ns
Test Condition
I_R = 10mA
VR = 50V
IF = 1.0mA
I_F = 15mA
VR = 0V, f = 1.0MHz
IF = IR = 5.0mA,
Irr = 0.1 x IR, RL = 100W
DS11011 Rev. F-2
1 of 2
1N5711