1N5221B_11 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE

NOT RECOMMENDED FOR
NEW DESIGN, USE
MMSZ52xxB
1N5221B - 1N5267B
500mW EPITAXIAL ZENER DIODE
Features
• 500mW Power Dissipation
• High Stability
• Surface Mount Equivalents Available
• Hermetic Package
• V_Z - Tolerance ±5%
• Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
• Case: DO-35
• Case Material: Glass
• Moisture Sensitivity: Level 1 per J-STD-020
• Leads: Solderable per MIL-STD-202, Method 208
• Terminals: Finish - Sn96.5Ag3.5. Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band
• Marking: Type Number
• Weight: 0.13 grams (approximate)
DO-35
Dim
Min
Max
A
25.40
⎯
B
⎯
4.00
C
⎯
0.60
D
⎯
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Forward Voltage
@ I_F = 200mA
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
V_F
T_J, T_STG
Value
500
300
1.1
-65 to +200
Notes: 1. Valid provided that leads are kept at TL ≤75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
Unit
mW
°C/W
V
°C
DS18006 Rev. 17 - 3
1 of 3
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