1N4448W_ Datasheet, PDF (1/3 Pages) Diodes Incorporated – FAST SWITCHING SURFACE MOUNT DIODE

SPICE MODEL: 1N4448W
1N4448W
Lead-free
FAST SWITCHING SURFACE MOUNT DIODE
Features
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
SOD-123
Dim Min Max
A
3.55 3.85
Mechanical Data
B
2.55 2.85
• Case: SOD-123
H
• Case Material: Molded Plastic. UL Flammability Classification
D
J
C
1.40 1.70
G
D
—
1.35
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
A
• Terminals: Solderable per MIL-STD-202, Method 208
B
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
C
E
leadframe)
• Polarity: Cathode Band
• Marking: Date Code and Type Code: See Page 3
0.45 0.65
E
0.55 Typical
G
0.25
—
H
0.11 Typical
J
—
0.10
α
0°
8°
• Type Code: T5
All Dimensions in mm
• Ordering Information See Page 3
• Weight: 0.01 grams (approximate)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
V_RM
VRRM
VRWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_θJA
T_j , T_STG
Value
100
75
53
500
250
4.0
2.0
400
315
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Peak Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VFM
IRM
CT
t_rr
Min
75
0.62






Max

0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
µA
µA
µA
nA
pF
ns
Test Condition
I_R = 10µA
I_F = 5.0mA
I_F = 10mA
IF = 100mA
I_F = 150mA
VR = 75V
V_R = 75V, T_j = 150°C
VR = 25V, Tj = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
DS12002 Rev. 14 - 2
1 of 3
www.diodes.com
1N4448W
© Diodes Incorporated