1N4150 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes"

1N4150
FAST SWITCHING DIODE
Features
· Ideal for Fast Logic Applications
· Ultra Fast Switching
· High Reliability
· High Conductance
Mechanical Data
· Case: DO-35, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.13 grams (approx.)
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
1N4150
Unit
Non-Repetitive Peak Reverse Voltage
@ 5.0mA
V_RM
75
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V
V_R
RMS Reverse Voltage
V_R(RMS)
35
V
Forward Continuous Current (Note 1)
IFM
400
mA
Average Rectified Output Current (Note 1)
I_O
200
mA
Repetitive Peak Forward Current (Note 1)
I_FRM
600
mA
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 1.0ms
I_FSM
1.0
4.0
A
Power Dissipation (Note 1)
P_d
500
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R_qJA
300
K/W
Operating and Storage Temperature Range
T_j, T_STG
-65 to +200
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage Drop
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Forward Recovery Time
Symbol
V_FM
I_RM
C_j
t_rr
t_fr
Min
0.54
0.66
0.76
0.82
0.87
¾
¾
¾
¾
Max
0.62
0.74
0.86
0.92
1.0
100
2.5
4.0
10
Note: 1. Valid provided that leads are kept at ambient temperature.
Unit
V
nA
mA
pF
ns
ns
Test Condition
IF = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 100mA
I_F = 200mA
T_A = 25°C
T_A = 150°C
VR = 0V, f = 1.0MHz
IF = IR = 200mA,
I_rr = 0.1 x I_R, R_L = 100W
IF = 200mA, VFR = 1.0V
DS12018 Rev. G-2
1 of 1
1N4150